Bathar
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Wafer substrate SiC 4H-N 8 òirleach Silicon Carbide Dummy Rannsachadh ìre tighead 500um
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4H-N/6H-N SiC Wafer Reasearch cinneasachadh Dummy ìre Dia150mm substrate silicon carbide
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Wafers SiC Silicon Carbide 8inch 200mm seòrsa 4H-N ìre toraidh ìre 500um tiugh
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Dia300x1.0mmt Tighead Wafer Sapphire C-Plane SSP/DSP
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Dia wafer HPSI SiC: tighead 3inch: 350um ± 25 µm airson Power Electronics
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Wafer carbide silicon SiC 8 òirleach 4H-N seòrsa 0.5mm ìre toraidh ìre sgrùdaidh fo-fhilleadh snasta àbhaisteach
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Wafer sapphire substrate sapphire 8 òirleach 200mm tiugh tana 1SP 2SP 0.5mm 0.75mm
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Criostal singilte Al2O3 99.999% wafers sapphire Dia200mm 1.0mm 0.75mm tighead
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156mm 159mm 6 òirleach Sapphire Wafer airson neach-giùlanC-Plane DSP TTV
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C/A/M axis wafers sapphire 4 òirleach criostal singilte Al2O3, substrate sapphire cruas àrd SSP DSP
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3 òirleach leth-insulation fìor-ghlan （HPSI） wafer SiC 350um Dummy ìre Prìomh ìre
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Substrate SiC seòrsa P SiC wafer Dia2inch toradh ùr