Dhachaigh
Companaidh
Mu dheidhinn Xinkehui
Bathar
Bathar ceirmeach
Epi-layer
Bathar Optical
Fo-strat
LiTaO3_LiNbO3
Sapphire
SiC
sileaconach
Criostal gem synthetach
Neach-giùlain Wafer
Naidheachdan
Cuir fios
English
Dhachaigh
Bathar
Fo-strat
SiC
SiC
4H-N/6H-N SiC Wafer Reasearch cinneasachadh Dummy ìre Dia150mm substrate silicon carbide
Wafer SiC substrate 200mm SiC ìre 4H-N 8inch
Sìol SiC 4H-N Dia205mm bho Shìona P agus D ìre Monocrystaline
6inch SiC Epitaxiy wafer seòrsa N/P a’ gabhail ri gnàthaichte
Dia150mm 4H-N 6inch SiC substrate Riochdachadh agus ìre dummy
Wafer SiC Epi 4inch airson MOS no SBD
Ingot SiC 2 òirleach Dia50.8mmx10mmt 4H-N monocrystal
Wafers SiC 4 òirleach 6H Semi-insulating SiC Substrates prìomh, rannsachadh, agus ìre chaochlaidich
Wafer substrate 6inch HPSI SiC wafers SiC leth-bhràthar Silicon Carbide
Wafers SiC leth-tàmailteach 4inch ìre Prìomh Riochdachaidh substrate HPSI SiC
Wafer substrate 3inch 76.2mm 4H-Semi SiC wafer Silicon Carbide Semi-maslach SiC wafers
Tha 3inch Dia76.2mm SiC a’ toirt a-steach fo-fhilleadh HPSI Prime Research agus ìre Dummy
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