Dhachaigh
Companaidh
Mu dheidhinn Xinkehui
Bathar
Fo-strat
Sapphire
SiC
sileacain
LiTaO3_LiNbO3
Bathar Optical
Epi-layer
Bathar ceirmeach
Criostal gem synthetach
Neach-giùlain Wafer
Uidheam semiconductor
Stuth meatailt singilte criostail
Naidheachdan
Cuir fios
English
Dhachaigh
Bathar
Fo-strat
SiC
SiC
Substrate SiC Dia200mm 4H-N agus HPSI Silicon carbide
Riochdachadh substrate SiC 3inch Dia76.2mm 4H-N
Substrate SiC P agus D ìre Dia50mm 4H-N 2inch
4H-N/6H-N SiC Wafer Reasearch cinneasachadh Dummy ìre Dia150mm substrate silicon carbide
Ingot SiC 2 òirleach Dia50.8mmx10mmt 4H-N monocrystal
Wafer SiC substrate 200mm SiC ìre 4H-N 8inch
Sìol SiC 4H-N Dia205mm bho Shìona P agus D ìre Monocrystaline
6inch SiC Epitaxiy wafer seòrsa N/P a’ gabhail ri gnàthaichte
Dia150mm 4H-N 6inch SiC substrate Riochdachadh agus ìre dummy
Wafer SiC Epi 4inch airson MOS no SBD
Wafers SiC 4 òirleach 6H Semi-insulating SiC Substrates prìomh, rannsachadh, agus ìre chaochlaidich
Wafer substrate 6inch HPSI SiC wafers SiC leth-bhràthar Silicon Carbide
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