Fo-strat
-
Wafer substrate SiC 4H-N 8 òirleach Silicon Carbide Dummy Rannsachadh ìre tighead 500um
-
4H-N/6H-N SiC Wafer Reasearch cinneasachadh Dummy ìre Dia150mm substrate silicon carbide
-
Wafers SiC Silicon Carbide 8inch 200mm seòrsa 4H-N ìre toraidh ìre 500um tiugh
-
Dia300x1.0mmt Tighead Wafer Sapphire C-Plane SSP/DSP
-
Wafer sapphire substrate sapphire 8 òirleach 200mm tiugh tana 1SP 2SP 0.5mm 0.75mm
-
Wafer carbide silicon SiC 8 òirleach 4H-N seòrsa 0.5mm ìre toraidh ìre sgrùdaidh fo-fhilleadh snasta àbhaisteach
-
Dia wafer HPSI SiC: tighead 3inch: 350um ± 25 µm airson Power Electronics
-
Criostal singilte Al2O3 99.999% wafers sapphire Dia200mm 1.0mm 0.75mm tighead
-
156mm 159mm 6 òirleach Sapphire Wafer airson neach-giùlanC-Plane DSP TTV
-
C/A/M axis wafers sapphire 4 òirleach criostal singilte Al2O3, substrate sapphire cruas àrd SSP DSP
-
3 òirleach leth-insulation fìor-ghlan （HPSI） wafer SiC 350um Dummy ìre Prìomh ìre
-
Substrate SiC seòrsa P SiC wafer Dia2inch toradh ùr