Fo-strat
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Pròiseas TVG air sapphire quartz BF33 wafer Glass wafer punching
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Singilte Crystal Silicon Wafer Si Substrate Seòrsa N/P Wafer Silicon Carbide Roghainneil
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Fo-stratan coimeasach N-Type SiC Dia6inch monocrystaline àrd-inbhe agus substrate càileachd ìosal
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SiC leth-insulation air fo-stratan Si Composite
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Fo-fhilleadh leth-insulation SiC Composite Dia2inch 4inch 6inch 8inch HPSI
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Faodar boule Sapphire synthetach Monocrystal Sapphire Blank Trast-thomhas agus tiugh a ghnàthachadh
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N-Type SiC air Si Substrates Composite Dia6inch
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Substrate SiC Dia200mm 4H-N agus HPSI Silicon carbide
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Riochdachadh substrate SiC 3inch Dia76.2mm 4H-N
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Substrate SiC P agus D ìre Dia50mm 4H-N 2inch
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Tha TGV Glass a’ toirt a-steach wafer 12 òirleach A’ pungadh glainne
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SiC Ingot 4H-N seòrsa Dummy ìre 2inch 3inch 4inch 6inch tighead: ＞ 10mm